降低单相准z源逆变器穿透状态的损耗

C. Baier, Claudio Flores, Manuel A. Díaz, M. Torres, J. Pou, P. Melín, E. Espinosa
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引用次数: 1

摘要

阻抗源逆变器近年来引起了人们的广泛关注,因为它们能够在输出端充当电压提升器/减压器,而不需要额外的dc/dc转换器来完成这项任务。在这些逆变器中,准阻抗源逆变器(qZSI)是最知名的拓扑之一。它考虑了两种基本的运行状态,即无穿透状态(nSTS)和穿透状态(STS)。qZSI的一个主要缺点是,由于激活该状态的半导体中的电压下降,STS可以呈现显着的功率损失。这项工作提出了一种简单的替代方案,可以在STS期间将这些损耗降低50%,从而提高阻抗源逆变器的整体效率。
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Reducing losses in the shoot-through state of a single-phase quasi-z-source inverter
Impedance source inverters have attracted much attention in recent years due to their ability to behave as voltage elevators/reducers at their output terminals without the need of an extra dc/dc converter to accomplish this task. Among these inverters, the quasi-impedance source inverter (qZSI) is one of the most known topologies. It considers two basic operating states, the no-shoot-through state (nSTS) and the shoot-through state (STS). One of the major drawbacks of the qZSI is that the STS can present significant power losses mainly due to the voltage drop in the semiconductors that activate this state. This work presents a simple alternative of implementation that allows reducing these losses up to 50% during the STS, thus increasing the overall efficiency of the impedance source inverters.
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