{"title":"自洽电光热模拟分析半导体热响应特性","authors":"G. Hatakoshi, M. Ishikawa","doi":"10.1109/NUSOD.2003.1259035","DOIUrl":null,"url":null,"abstract":"Thermal response characteristics ot output power in semiconductor lasers were analyzed. Refractive index changes caused by a rise in temperature had a significant effect on the output-power stability under pulsed operation for lasers with a weakly confined guided-mode.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"23 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of thermal response characteristics of semiconductor by self-consistent electro-opto-thermal simulation\",\"authors\":\"G. Hatakoshi, M. Ishikawa\",\"doi\":\"10.1109/NUSOD.2003.1259035\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thermal response characteristics ot output power in semiconductor lasers were analyzed. Refractive index changes caused by a rise in temperature had a significant effect on the output-power stability under pulsed operation for lasers with a weakly confined guided-mode.\",\"PeriodicalId\":206987,\"journal\":{\"name\":\"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings\",\"volume\":\"23 2\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2003.1259035\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2003.1259035","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis of thermal response characteristics of semiconductor by self-consistent electro-opto-thermal simulation
Thermal response characteristics ot output power in semiconductor lasers were analyzed. Refractive index changes caused by a rise in temperature had a significant effect on the output-power stability under pulsed operation for lasers with a weakly confined guided-mode.
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