基于载波注入移相器的2微米波段Ge环调制器

2021 European Conference on Optical Communication (ECOC) Pub Date : 2021-09-13 DOI:10.1109/ecoc52684.2021.9605873

Ziqiang Zhao, C. Ho, Qiang Li, K. Toprasertpong, S. Takagi, M. Takenaka

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引用次数: 1

摘要

我们在gei平台上通过载流子注入演示了Ge环调制器的概念验证。由于Ge肋波导具有很强的光约束，通过注入1ma的电流引起光相移，获得消光比为13db的光调制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Ge Ring Modulator Based on Carrier-injection Phaser Shifter Operating at Two Micrometer Band

We demonstrated proof-of-concept Ge ring modulator by carrier injection on the Ge-on-insulator (GeOI) platform. Owing to the strong optical confinement in Ge rib waveguide, the optical modulation with 13 dB extinction ratio was obtained by optical phase shift induced by 1 mA current injection.

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2021 European Conference on Optical Communication (ECOC)

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