{"title":"利用第四系阿林甘层改进深紫外发光二极管","authors":"Saad Rasheed, Muhammad Usman","doi":"10.1109/ICETECC56662.2022.10069606","DOIUrl":null,"url":null,"abstract":"Thin aluminium indium gallium nitride (AlInGaN) layer is sandwiched in AlGaN-based light-emitting diodes (LEDs) for the enhanced optoelectronic output. Our simulation finding shows that our proposed structure (LED 2) has a higher internal quantum efficiency (IQE) peak of 58% than the reference structure (LED 1). The rate of recombination in the MQW region of the LED 2 structure is improved by ~48%, which can be attributed to the enhanced carrier density and recombination in the multiquantum wells (MQWs) of LED 2.","PeriodicalId":364463,"journal":{"name":"2022 International Conference on Emerging Technologies in Electronics, Computing and Communication (ICETECC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-12-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Employing Quaternary Alingan Layer to Improve Deep Ultraviolet Light-Emitting Diodes\",\"authors\":\"Saad Rasheed, Muhammad Usman\",\"doi\":\"10.1109/ICETECC56662.2022.10069606\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thin aluminium indium gallium nitride (AlInGaN) layer is sandwiched in AlGaN-based light-emitting diodes (LEDs) for the enhanced optoelectronic output. Our simulation finding shows that our proposed structure (LED 2) has a higher internal quantum efficiency (IQE) peak of 58% than the reference structure (LED 1). The rate of recombination in the MQW region of the LED 2 structure is improved by ~48%, which can be attributed to the enhanced carrier density and recombination in the multiquantum wells (MQWs) of LED 2.\",\"PeriodicalId\":364463,\"journal\":{\"name\":\"2022 International Conference on Emerging Technologies in Electronics, Computing and Communication (ICETECC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 International Conference on Emerging Technologies in Electronics, Computing and Communication (ICETECC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICETECC56662.2022.10069606\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Conference on Emerging Technologies in Electronics, Computing and Communication (ICETECC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICETECC56662.2022.10069606","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Employing Quaternary Alingan Layer to Improve Deep Ultraviolet Light-Emitting Diodes
Thin aluminium indium gallium nitride (AlInGaN) layer is sandwiched in AlGaN-based light-emitting diodes (LEDs) for the enhanced optoelectronic output. Our simulation finding shows that our proposed structure (LED 2) has a higher internal quantum efficiency (IQE) peak of 58% than the reference structure (LED 1). The rate of recombination in the MQW region of the LED 2 structure is improved by ~48%, which can be attributed to the enhanced carrier density and recombination in the multiquantum wells (MQWs) of LED 2.
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