M. Flórez, W. De La Cruz, P. Teherán, L. Cota, G. Gordillo
{"title":"低电阻接触CdTe薄膜","authors":"M. Flórez, W. De La Cruz, P. Teherán, L. Cota, G. Gordillo","doi":"10.1109/PVSC.1996.564283","DOIUrl":null,"url":null,"abstract":"A new procedure to realize low resistance contact to polycrystalline CdTe thin films for solar cells deposited by CSS method is presented. Initially, the CdTe samples are etched with an oxidant agent in order to form a Te-rich surface layer; subsequently the CdTe samples are dipped in a CuCl solution to form a p/sup +/-Cu/sub x/Te (1/spl les/x/spl les/2) layer through an ion-exchange chemical reaction; finally, the samples were contacted with Cu and Cu/Au deposited by thermal evaporation and C:Cu deposited by DC magnetron sputtering. Contact resistivities of 0.16 /spl Omega/cm/sup 2/ were obtained using sulphochromic solution as oxidant agent and Cu as electrical contact. The changes induced in the CdTe-surface by the different surface treatments were studied by means of XRD and AES measurements.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"81 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Low resistance contact to CdTe thin films\",\"authors\":\"M. Flórez, W. De La Cruz, P. Teherán, L. Cota, G. Gordillo\",\"doi\":\"10.1109/PVSC.1996.564283\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new procedure to realize low resistance contact to polycrystalline CdTe thin films for solar cells deposited by CSS method is presented. Initially, the CdTe samples are etched with an oxidant agent in order to form a Te-rich surface layer; subsequently the CdTe samples are dipped in a CuCl solution to form a p/sup +/-Cu/sub x/Te (1/spl les/x/spl les/2) layer through an ion-exchange chemical reaction; finally, the samples were contacted with Cu and Cu/Au deposited by thermal evaporation and C:Cu deposited by DC magnetron sputtering. Contact resistivities of 0.16 /spl Omega/cm/sup 2/ were obtained using sulphochromic solution as oxidant agent and Cu as electrical contact. The changes induced in the CdTe-surface by the different surface treatments were studied by means of XRD and AES measurements.\",\"PeriodicalId\":410394,\"journal\":{\"name\":\"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996\",\"volume\":\"81 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1996.564283\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1996.564283","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new procedure to realize low resistance contact to polycrystalline CdTe thin films for solar cells deposited by CSS method is presented. Initially, the CdTe samples are etched with an oxidant agent in order to form a Te-rich surface layer; subsequently the CdTe samples are dipped in a CuCl solution to form a p/sup +/-Cu/sub x/Te (1/spl les/x/spl les/2) layer through an ion-exchange chemical reaction; finally, the samples were contacted with Cu and Cu/Au deposited by thermal evaporation and C:Cu deposited by DC magnetron sputtering. Contact resistivities of 0.16 /spl Omega/cm/sup 2/ were obtained using sulphochromic solution as oxidant agent and Cu as electrical contact. The changes induced in the CdTe-surface by the different surface treatments were studied by means of XRD and AES measurements.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
