抗辐射，高电压，高精度模拟系列

2017 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2017-07-01 DOI:10.1109/NSREC.2017.8115471

W. H. Newman, N. V. van Vonno, O. Mansilla, L. Pearce, E. Thomson

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引用次数: 1

摘要

Intersil已经开发了一系列辐射硬化，高压，高精度的模拟部件，在键合晶圆SOI上的互补双极工艺。该过程中的部件称为PR40，包括低噪声精密运放大器，带隙电压参考和温度传感器。

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A radiation hardened, high-voltage, high-precision analog family

Intersil has developed a family of radiation-hardened, high-voltage, high-precision analog parts in a complementary bipolar process on bonded-wafer SOI. Parts in this process, called PR40, include low-noise precision opamps, bandgap voltage references and a temperature sensor.

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来源期刊

2017 IEEE Radiation Effects Data Workshop (REDW)

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