新型宽有源通道大功率超发光二极管

Yu. O. Kostin, A. A. Lobintsov, S. Yakubovich
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引用次数: 0

摘要

研究了两种基于DQW (InGa)As/(GaAl)As/GaAs纳米结构的超发光二极管(SLDs),它们具有25µm宽的多模有源通道,发射波长分别为890 nm和950nm。它们确保在标准50 μ m多模光纤(MMF)下连续光功率超过100 mW。
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Novel high-power superluminescent diodes with wide active channels
Two types of superluminescent diodes (SLDs) based on DQW (InGa)As/(GaAl)As/GaAs nanostructures with 25 µm-width multimode active channels emitting at 890 nm and 950nm were studied. They ensure CW optical power of more than 100 mW ex standard 50 µm multimode fiber (MMF).
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Copyright page Band structure of InGaN/GaN quantum wells under influence of internal fields and indium surface segregation Plasmon resonances in the H-wave scattering by a nanosize thin flat silver strip Research of autoconvolution method efficiency under control of photonic crystal fibers positioning Nonresonant photoproduction of an electron-positron pair with radiation of a photon
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