多孔硅的孔隙率与发光性能关系的研究

A. Lenshin, Yaroslav A. Peshkov, O. V. Chernousova, S. Kannykin, D. Minakov
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引用次数: 0

摘要

本文采用电化学刻蚀法制备了不同孔隙率的多孔硅,并对其光致发光特性进行了研究。发现了两种众所周知的多孔硅的光致发光机制,它们与表面的组成和形态有关,并确定了它们在什么孔隙率值下起作用。结果表明,孔隙率指数的增加导致光致发光强度的增加。
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Investigation of the relationship between porosity and luminescent properties of porous silicon
In this work we obtained porous silicon with different porosity by electrochemical etching and studied their photoluminescence. Two well-known photoluminescence mechanisms of porous silicon related to the composition and morphology of the surface have been discovered, and it has been established at what porosity values they prevail. It is shown that an increase in the porosity index leads to an increase in the intensity of photoluminescence.
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