低开关损耗、低电磁干扰噪声、高ie效应的空穴路径概念

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Pub Date : 2017-05-01 DOI:10.23919/ISPSD.2017.7988894

M. Sawada, Y. Sakurai, K. Ohi, Y. Ikura, Y. Onozawa, T. Yamazaki, Y. Nabetani

{"title":"低开关损耗、低电磁干扰噪声、高ie效应的空穴路径概念","authors":"M. Sawada, Y. Sakurai, K. Ohi, Y. Ikura, Y. Onozawa, T. Yamazaki, Y. Nabetani","doi":"10.23919/ISPSD.2017.7988894","DOIUrl":null,"url":null,"abstract":"This paper presents the “Hole Path Concept” in trench gate IGBTs in order to have extended performance in faster switching with balance low switching loss and low ElectroMagnetic Interference (EMI) noise. The hole path IGET which is utilized narrow hole extraction regions in floating p-region can realize a better turn-on di/dt controllability with high IE effect.","PeriodicalId":202561,"journal":{"name":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"Hole path concept for low switching loss and low EMI noise with high IE-effect\",\"authors\":\"M. Sawada, Y. Sakurai, K. Ohi, Y. Ikura, Y. Onozawa, T. Yamazaki, Y. Nabetani\",\"doi\":\"10.23919/ISPSD.2017.7988894\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the “Hole Path Concept” in trench gate IGBTs in order to have extended performance in faster switching with balance low switching loss and low ElectroMagnetic Interference (EMI) noise. The hole path IGET which is utilized narrow hole extraction regions in floating p-region can realize a better turn-on di/dt controllability with high IE effect.\",\"PeriodicalId\":202561,\"journal\":{\"name\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ISPSD.2017.7988894\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISPSD.2017.7988894","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 18

摘要

本文提出了沟槽栅极igbt的“空穴路径概念”，以扩展其在平衡、低开关损耗和低电磁干扰(EMI)噪声下的快速开关性能。利用浮动p区窄孔提取区域的孔路IGET可以实现较好的开通di/dt可控性和较高的IE效果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Hole path concept for low switching loss and low EMI noise with high IE-effect

This paper presents the “Hole Path Concept” in trench gate IGBTs in order to have extended performance in faster switching with balance low switching loss and low ElectroMagnetic Interference (EMI) noise. The hole path IGET which is utilized narrow hole extraction regions in floating p-region can realize a better turn-on di/dt controllability with high IE effect.

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2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

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