GeSn/SiGeSn技术在中红外集成光子学中的应用进展

2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) Pub Date : 2019-08-01 DOI:10.1109/RAPID.2019.8864328

Yiyin Zhou, Huong Tran, Shui-Qing Yu, S. Ghetmiri, A. Mosleh, M. Mortazavi, W. Du, G. Sun, R. Soref, J. Margetis, J. Tolle, Yiyin Zhou, Huong Tran, Baohua Li

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摘要

研究了GeSn光泵浦激光器和光电探测器。激光器的最高工作温度达到270 K。测得探测器的光谱截止度高达3.6 μm。此外，利用光电导体获得了中红外图像。

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Development of GeSn/SiGeSn Technique towards Integrated Mid-Infrared Photonics Applications

GeSn optically pumped lasers and photodetectors have been investigated. The maximum operation temperature of 270 K was achieved for lasers. Spectral cut-off up to 3.6 μm was measured for detectors. Moreover, the mid-infrared images were obtained using photoconductors.

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2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)

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