N. Banno, M. Tada, K. Okamoto, N. Iguchi, T. Sakamoto, M. Miyamura, Y. Tsuji, H. Hada, H. Ochi, H. Onodera, M. Hashimoto, T. Sugibayashi
{"title":"一种新型的双压敏电阻(A - si /SiN/ A - si)互补原子开关(2V-1CAS)用于多扇出非易失性交叉排开关","authors":"N. Banno, M. Tada, K. Okamoto, N. Iguchi, T. Sakamoto, M. Miyamura, Y. Tsuji, H. Hada, H. Ochi, H. Onodera, M. Hashimoto, T. Sugibayashi","doi":"10.1109/IEDM.2015.7409614","DOIUrl":null,"url":null,"abstract":"A nonvolatile and compact switch realizing multiple fan-outs of a crossbar switch for programmable logic devices (PLDs) has been newly developed by using two-varistors selected complementary atom switch (2V-1CAS). The two control lines connected to the varistors realize the accurate programming of each cross-point without select transistors. The novel nitrogen-modulated, TiN/a-Si/SiN/a-Si/TiN varistor shows superior nonlinear (NL) characteristic of ~105, which are successfully stacked on the top of CAS with dual-hard mask (DHM) process. The developed 2V-1CAS (18F2) gives a promising switch block (SB) used for energy-efficient, nonvolatile PLDs.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A novel two-varistors (a-Si/SiN/a-Si) selected complementary atom switch (2V-1CAS) for nonvolatile crossbar switch with multiple fan-outs\",\"authors\":\"N. Banno, M. Tada, K. Okamoto, N. Iguchi, T. Sakamoto, M. Miyamura, Y. Tsuji, H. Hada, H. Ochi, H. Onodera, M. Hashimoto, T. Sugibayashi\",\"doi\":\"10.1109/IEDM.2015.7409614\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A nonvolatile and compact switch realizing multiple fan-outs of a crossbar switch for programmable logic devices (PLDs) has been newly developed by using two-varistors selected complementary atom switch (2V-1CAS). The two control lines connected to the varistors realize the accurate programming of each cross-point without select transistors. The novel nitrogen-modulated, TiN/a-Si/SiN/a-Si/TiN varistor shows superior nonlinear (NL) characteristic of ~105, which are successfully stacked on the top of CAS with dual-hard mask (DHM) process. The developed 2V-1CAS (18F2) gives a promising switch block (SB) used for energy-efficient, nonvolatile PLDs.\",\"PeriodicalId\":336637,\"journal\":{\"name\":\"2015 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"76 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2015.7409614\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2015.7409614","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel two-varistors (a-Si/SiN/a-Si) selected complementary atom switch (2V-1CAS) for nonvolatile crossbar switch with multiple fan-outs
A nonvolatile and compact switch realizing multiple fan-outs of a crossbar switch for programmable logic devices (PLDs) has been newly developed by using two-varistors selected complementary atom switch (2V-1CAS). The two control lines connected to the varistors realize the accurate programming of each cross-point without select transistors. The novel nitrogen-modulated, TiN/a-Si/SiN/a-Si/TiN varistor shows superior nonlinear (NL) characteristic of ~105, which are successfully stacked on the top of CAS with dual-hard mask (DHM) process. The developed 2V-1CAS (18F2) gives a promising switch block (SB) used for energy-efficient, nonvolatile PLDs.
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