{"title":"F-C类x波段MMIC GaN功率放大器:波形工程方法的扩展","authors":"E. Cipriani, P. Colantonio, F. Giannini","doi":"10.1109/INMMIC.2017.7927299","DOIUrl":null,"url":null,"abstract":"This contribution reports the design of an X-band MMIC power amplifier in a 0.25 um GaN technology, proposing for the first time a harmonic manipulation approach on a class C bias condition. Output network provides the power matching condition at fundamental frequency and an open circuit condition at the 3rd harmonic; the correct phase ratio between drain current components is assured by the proper input 2nd harmonic impedance. This solution allows to reach an efficiency higher than 60% in the frequency band 8.5 GHz–9.5 GHz.","PeriodicalId":322300,"journal":{"name":"2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Class F-C X-band MMIC GaN power amplifier: An extension of waveform engineering approach\",\"authors\":\"E. Cipriani, P. Colantonio, F. Giannini\",\"doi\":\"10.1109/INMMIC.2017.7927299\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This contribution reports the design of an X-band MMIC power amplifier in a 0.25 um GaN technology, proposing for the first time a harmonic manipulation approach on a class C bias condition. Output network provides the power matching condition at fundamental frequency and an open circuit condition at the 3rd harmonic; the correct phase ratio between drain current components is assured by the proper input 2nd harmonic impedance. This solution allows to reach an efficiency higher than 60% in the frequency band 8.5 GHz–9.5 GHz.\",\"PeriodicalId\":322300,\"journal\":{\"name\":\"2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-04-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INMMIC.2017.7927299\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INMMIC.2017.7927299","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
摘要
本文报道了一种采用0.25 um GaN技术的x波段MMIC功率放大器的设计，首次提出了C类偏置条件下的谐波处理方法。输出网络提供基频处的功率匹配条件和三次谐波处的开路条件;适当的输入二次谐波阻抗保证了漏极电流分量之间的正确相位比。该解决方案允许在8.5 GHz - 9.5 GHz频段内达到超过60%的效率。
Class F-C X-band MMIC GaN power amplifier: An extension of waveform engineering approach
This contribution reports the design of an X-band MMIC power amplifier in a 0.25 um GaN technology, proposing for the first time a harmonic manipulation approach on a class C bias condition. Output network provides the power matching condition at fundamental frequency and an open circuit condition at the 3rd harmonic; the correct phase ratio between drain current components is assured by the proper input 2nd harmonic impedance. This solution allows to reach an efficiency higher than 60% in the frequency band 8.5 GHz–9.5 GHz.
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