{"title":"GaAs-AlGaAs异质结中的二维热电子输运","authors":"Weng Ming-qi, Wu Hang-sheng","doi":"10.1088/1004-423X/8/9/007","DOIUrl":null,"url":null,"abstract":"The mobility of a two-dimensional electron gas in GaAs-AlGaAs heterojunction is recomputed through solving numerically the balance equation. The peculiarity of the present study lies in that a new expression for the distribution function and the renormalized phonon frequency are used in the computation. Compared with those reported by previous authors, our result shows better agreement with the experimental data.","PeriodicalId":188146,"journal":{"name":"Acta Physica Sinica (overseas Edition)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Two-dimensional hot-electron transport in GaAs-AlGaAs heterojunctions\",\"authors\":\"Weng Ming-qi, Wu Hang-sheng\",\"doi\":\"10.1088/1004-423X/8/9/007\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The mobility of a two-dimensional electron gas in GaAs-AlGaAs heterojunction is recomputed through solving numerically the balance equation. The peculiarity of the present study lies in that a new expression for the distribution function and the renormalized phonon frequency are used in the computation. Compared with those reported by previous authors, our result shows better agreement with the experimental data.\",\"PeriodicalId\":188146,\"journal\":{\"name\":\"Acta Physica Sinica (overseas Edition)\",\"volume\":\"73 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Acta Physica Sinica (overseas Edition)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/1004-423X/8/9/007\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Acta Physica Sinica (overseas Edition)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1004-423X/8/9/007","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Two-dimensional hot-electron transport in GaAs-AlGaAs heterojunctions
The mobility of a two-dimensional electron gas in GaAs-AlGaAs heterojunction is recomputed through solving numerically the balance equation. The peculiarity of the present study lies in that a new expression for the distribution function and the renormalized phonon frequency are used in the computation. Compared with those reported by previous authors, our result shows better agreement with the experimental data.
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