{"title":"超越14nm节点的高性能计算——除了Si之外还有什么?","authors":"W. Haensch","doi":"10.1109/ULIS.2012.6193350","DOIUrl":null,"url":null,"abstract":"Conventional CMOS scaling is rapidly coming to an end and the quest for solutions is in full swing how to meet the computational demands for the foreseeable future. Possible solutions are the change of device architecture and the introduction of high mobility materials for the devices. Beyond the classical device materials Si, Ge, and some III/V compounds carbon in the form of carbon nano tubes seems to provide an interesting alternative for digital applications.","PeriodicalId":350544,"journal":{"name":"2012 13th International Conference on Ultimate Integration on Silicon (ULIS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"High performance computing beyond 14nm node — Is there anything other than Si?\",\"authors\":\"W. Haensch\",\"doi\":\"10.1109/ULIS.2012.6193350\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Conventional CMOS scaling is rapidly coming to an end and the quest for solutions is in full swing how to meet the computational demands for the foreseeable future. Possible solutions are the change of device architecture and the introduction of high mobility materials for the devices. Beyond the classical device materials Si, Ge, and some III/V compounds carbon in the form of carbon nano tubes seems to provide an interesting alternative for digital applications.\",\"PeriodicalId\":350544,\"journal\":{\"name\":\"2012 13th International Conference on Ultimate Integration on Silicon (ULIS)\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-03-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 13th International Conference on Ultimate Integration on Silicon (ULIS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ULIS.2012.6193350\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 13th International Conference on Ultimate Integration on Silicon (ULIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULIS.2012.6193350","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High performance computing beyond 14nm node — Is there anything other than Si?
Conventional CMOS scaling is rapidly coming to an end and the quest for solutions is in full swing how to meet the computational demands for the foreseeable future. Possible solutions are the change of device architecture and the introduction of high mobility materials for the devices. Beyond the classical device materials Si, Ge, and some III/V compounds carbon in the form of carbon nano tubes seems to provide an interesting alternative for digital applications.