高Q压控振荡器采用与CMOS集成电路技术兼容的电声器件

Pilsoon Choi, Seok-Bong Hyun, Y. Eo, Kwyro Lee
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引用次数: 3

摘要

使用高Q的表面声波器件可以在压控振荡器(VCO)中实现低相位噪声特性。在这种类型的压控振荡器中,提出了获得宽调谐范围和低相位噪声特性的新方法,并进行了实验验证。本文还展示了采用与CMOS集成电路技术兼容的PLIC (polylic Integrated Circuit)技术实现单片机vco的可行性,从而使我们能够开发出真正的单片机移动通信系统。
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High Q VCO using an electro-acoustic device compatible with CMOS integrated circuit technology
Low phase noise characteristic can be in a VCO (Voltage Controlled Oscillator) by using a high Q SAW (Surface Acoustic Wave) device. In this type of VCO, new method for obtaining both wide tuning range and low phase noise characteristic is proposed and experimentally verified. This paper also shows the feasibility of single chip VCOs using PLIC (Poly-Lithic Integrated Circuit) technology compatible with CMOS integrated circuit technology, which allows us to develop a true single chip mobile communication system.
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