用于太赫兹单片微波集成电路和系统的亚50nm磷化铟高电子迁移率晶体管技术

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562646

S. Sarkozy, X. Mei, W. Yoshida, Po-Hsin Liu, L. Lee, Joe X. Zhou, K. Leong, V. Radisic, W. Deal, R. Lai

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引用次数: 4

摘要

本文报道了sub-50nm InP HEMT MMIC工艺的工艺和技术，实现了高达670 GHz的信号放大。特别地，不通常处理的考虑，如相关的处理要求和晶体管的均匀性建立工作芯片组进行了讨论。最后，介绍了该技术从研发阶段到生产阶段的初始消耗数据。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Sub-50nm indium phosphide high electron mobility transistor technology for terahertz monolithic microwave integrated circuits and systems

This paper reports on the process and technology of the sub-50nm InP HEMT MMIC process which has enabled signal amplification up to 670 GHz. In particular, considerations not commonly addressed such as the related processing requirements and uniformity of transistors to establish working chipsets are discussed. Finally, initial burn in data is presented as the technology evolves from a research and development process to production.

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2013 International Conference on Indium Phosphide and Related Materials (IPRM)

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