酞菁/氧化钒场效应晶体管的制备与评价

Y. Takatsuka, S. Kitamura, T. Akazawa, T. Takahashi, M. Minagawa, Y. Ohdaira, A. Baba, K. Shinbo, K. Kato, F. Kaneko
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引用次数: 2

摘要

用酞菁镁(MgPc)和五氧化二钒(V2O5)制备场效应晶体管。采用几种有机溶剂对MgPc薄膜进行气相处理。紫外-可见吸收光谱、表面形貌和x射线衍射图随处理的不同发生了很大的变化。各处理均改善了FET的特性,其中以二氯甲烷处理改善效果最大。此外,在FET中插入作为有机发光二极管载流子生成层的V2O5薄膜,改变FET的特性。应采用蒸气处理和V2O5插入来控制FET的性能。
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Preparation and evaluation of phthalocyanine/vanadium oxide field-effect transistors
Field-effect transistors were prepared with magnesium phthalocyanine (MgPc) and vanadium pentoxide (V2O5). Vapor treatments of several organic solvents were carried out for MgPc thin films. The UV-vis absorption spectra, surface morphologies, X-ray diffraction patterns were largely changed with the treatments. The FET characteristics were also improved by the treatments and dichloromethane treatment induced the largest improvement. Furthermore, V2O5 film, which is used as carrier generation layer in organic light-emitting diodes, were inserted in the FET and the FET characteristic was changed. The vapor treatment and V2O5 insertion should be used for controlling FET performance.
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