多空心放电等离子体CVD合成纳米硅的光致发光研究

Y. Kawashima, Kousuke Yamamoto, M. Sato, T. Matsunaga, K. Nakahara, D. Yamashita, Hidefumi Matsuzaki, G. Uchida, K. Koga, M. Shiratani, M. Kondo
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引用次数: 0

摘要

我们测量了分散在甲醇中的晶体和非晶硅纳米颗粒的光致发光光谱,以证明在244nm和405nm激光激发下激子的产生。光致发光光谱在484 ~ 500nm处有宽峰,表明晶态和非晶态Si纳米颗粒中有激子产生。此外,在324nm-380nm处观察到表面缺陷处复合中心对应的峰。这表明了纳米颗粒表面缺陷的终止对太阳能电池应用的重要性。
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Photoluminescence of Si nanoparticles synthesized using multi-hollow discharge plasma CVD
We have measured photoluminescence spectra of crystalline and amorphous Si nanoparticles dispersed in methanol to demonstrate exciton generation under 244nm and 405nm laser light excitation. The photoluminescence spectra have broad peaks centered at 484–500nm, indicating exciton generation in crystalline and amorphous Si nanoparticles. In addition, the peaks corresponding to the recombination centers at their surface defects are observed at 324nm–380nm. This indicates the importance of termination of surface defects on nanoparticles for application to solar cells.
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