{"title":"无偏微波开关用光电子器件","authors":"J. L. Freeman, S. Ray, D. West, A. Thompson","doi":"10.1109/MWSYM.1992.188073","DOIUrl":null,"url":null,"abstract":"The authors describe two simple microwave switches controlled by a weak optical beam. They are suitable for connecting microwave elements where electrical bias is not possible. Results from two devices are presented: a surface-depleted, gateless, optical FET; and a FET controlled by an integrated photovoltaic diode. Insertion losses of 3 dB and isolations of 20 dB were obtained up to 5.6 GHz with an optical power of 1 mW.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Optoelectronic devices for unbiased microwave switching\",\"authors\":\"J. L. Freeman, S. Ray, D. West, A. Thompson\",\"doi\":\"10.1109/MWSYM.1992.188073\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors describe two simple microwave switches controlled by a weak optical beam. They are suitable for connecting microwave elements where electrical bias is not possible. Results from two devices are presented: a surface-depleted, gateless, optical FET; and a FET controlled by an integrated photovoltaic diode. Insertion losses of 3 dB and isolations of 20 dB were obtained up to 5.6 GHz with an optical power of 1 mW.<<ETX>>\",\"PeriodicalId\":165665,\"journal\":{\"name\":\"1992 IEEE Microwave Symposium Digest MTT-S\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 IEEE Microwave Symposium Digest MTT-S\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1992.188073\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 IEEE Microwave Symposium Digest MTT-S","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1992.188073","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optoelectronic devices for unbiased microwave switching
The authors describe two simple microwave switches controlled by a weak optical beam. They are suitable for connecting microwave elements where electrical bias is not possible. Results from two devices are presented: a surface-depleted, gateless, optical FET; and a FET controlled by an integrated photovoltaic diode. Insertion losses of 3 dB and isolations of 20 dB were obtained up to 5.6 GHz with an optical power of 1 mW.<>