一种低噪声体耦合CMOS正交压控振荡器

Yi-Hsien Cho, F. Chang, Ming-Fong Lei, Ming-Da Tsai, Hong-Yeh Chang, Huei Wang
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引用次数: 16

摘要

本文提出了一种采用0.18 μ m 1P6M标准CMOS工艺的正交压控振荡器(QVCO)。QVCO是由两个差分振荡器通过本体端子组合而成的。与传统的qvco相比,利用这种方法可以降低功耗并消除额外耦合晶体管带来的噪声。为了改善相位噪声,该振荡器采用Colpitts拓扑结构,相位噪声比交叉耦合振荡器低。此外,由于PMOS比NMOS具有更小的1/f噪声,因此Colpitts振荡器只采用PMOS以获得更好的相位噪声性能。VCO工作在4.9至5.5 GHz,调谐范围超过11%。在5.2 GHz时,测量到的600 khz偏置相位噪声为-117 dBc/Hz。QVCO在1.8 V时的功耗为10.8 mW, FOM为185 dB。
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A low noise bulk-coupled colpitts CMOS quadrature VCO
This paper proposes a quadrature voltage-controlled oscillator (QVCO) using 0.18-mum 1P6M standard CMOS process. The QVCO is realized by combining two differential oscillators via the bulk terminals. Using this approach, we can reduce the power dissipation and remove the noise from the additional coupling transistors compared with conventional QVCOs. To improve the phase noise, the oscillator is composed of Colpitts topology for lower phase noise than its cross-coupled counterpart. Moreover, the Colpitts oscillator adopts only PMOS to achieve a better phase noise performance because PMOS has less 1/f noise than NMOS. The VCO operates from 4.9 to 5.5 GHz with more than 11% tuning range. The measured phase noise at 600-kHz offset is -117 dBc/Hz at 5.2 GHz. The QVCO dissipates 10.8 mW at 1.8 V and achieves a good FOM of 185 dB.
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