{"title":"利用谱域技术的三维金属化结构全波分析","authors":"T. Becks, I. Wolff","doi":"10.1109/MWSYM.1992.188191","DOIUrl":null,"url":null,"abstract":"A full-wave method for the investigation of microstrip- and coplanar-structures including 3-D metallization structures is presented. The spectral domain analysis method was used to calculate the S-parameters of unshielded microwave components containing bond-wires and air-bridges. The general formulation and the method are described. The application of the theory is outlined by a comparison of measured and calculated results for a spiral inductor.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Full-wave analysis of 3D metallization structures using a spectral domain technique\",\"authors\":\"T. Becks, I. Wolff\",\"doi\":\"10.1109/MWSYM.1992.188191\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A full-wave method for the investigation of microstrip- and coplanar-structures including 3-D metallization structures is presented. The spectral domain analysis method was used to calculate the S-parameters of unshielded microwave components containing bond-wires and air-bridges. The general formulation and the method are described. The application of the theory is outlined by a comparison of measured and calculated results for a spiral inductor.<<ETX>>\",\"PeriodicalId\":165665,\"journal\":{\"name\":\"1992 IEEE Microwave Symposium Digest MTT-S\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 IEEE Microwave Symposium Digest MTT-S\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1992.188191\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 IEEE Microwave Symposium Digest MTT-S","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1992.188191","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Full-wave analysis of 3D metallization structures using a spectral domain technique
A full-wave method for the investigation of microstrip- and coplanar-structures including 3-D metallization structures is presented. The spectral domain analysis method was used to calculate the S-parameters of unshielded microwave components containing bond-wires and air-bridges. The general formulation and the method are described. The application of the theory is outlined by a comparison of measured and calculated results for a spiral inductor.<>
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