基于InGaN/GaN量子阱的无磷白光发光二极管

2007 Asia Optical Fiber Communication and Optoelectronics Conference Pub Date : 2007-12-26 DOI:10.1109/AOE.2007.4410804

Chi-Feng Huang, Chin-Feng Lu, Dong-Ming Yeh, Yung-Sheng Chen, Wen-Yu Shiao, C.C. Yang

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摘要

讨论了制造白光发光二极管的两种方法，包括堆叠各种InGaN/GaN量子阱以混合成白光和使用i - vi纳米晶体将短波光子转换成长波光。

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Phosphor-free white-light light-emitting diodes based on InGaN/GaN quantum wells

Two approaches for fabricating white-light light-emitting diodes are discussed, including the stacking of various InGaN/GaN quantum wells for mixing into white light and the use of ll-VI nano-crystals for converting short-wavelength photons into long-wavelength light.

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2007 Asia Optical Fiber Communication and Optoelectronics Conference

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