一种集成锁相环的60ghz全差分前端接收机

2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI:10.1109/EMICC.2006.282786

Yaoming Sun, S. Glisic, F. Herzel

{"title":"一种集成锁相环的60ghz全差分前端接收机","authors":"Yaoming Sun, S. Glisic, F. Herzel","doi":"10.1109/EMICC.2006.282786","DOIUrl":null,"url":null,"abstract":"This paper presents a 60 GHz receiver front-end in SiGe:C BiCMOS technology. The conversion gain is 22 dB from 60 GHz to 5 GHz without IF amplification. This front-end includes an LNA, a mixer and a 56 GHz PLL. The measured output 1-dB compression point is -5dBm","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"44","resultStr":"{\"title\":\"A Fully Differential 60 GHz Receiver Front-End with Integrated PLL in SiGe:C BiCMOS\",\"authors\":\"Yaoming Sun, S. Glisic, F. Herzel\",\"doi\":\"10.1109/EMICC.2006.282786\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 60 GHz receiver front-end in SiGe:C BiCMOS technology. The conversion gain is 22 dB from 60 GHz to 5 GHz without IF amplification. This front-end includes an LNA, a mixer and a 56 GHz PLL. The measured output 1-dB compression point is -5dBm\",\"PeriodicalId\":269652,\"journal\":{\"name\":\"2006 European Microwave Integrated Circuits Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"44\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 European Microwave Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2006.282786\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 European Microwave Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2006.282786","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 44

摘要

本文介绍了一种采用SiGe:C BiCMOS技术的60ghz接收机前端。在无中频放大的情况下，从60 GHz到5 GHz的转换增益为22 dB。该前端包括一个LNA、一个混频器和一个56 GHz锁相环。测量的输出1db压缩点为-5dBm

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

A Fully Differential 60 GHz Receiver Front-End with Integrated PLL in SiGe:C BiCMOS

This paper presents a 60 GHz receiver front-end in SiGe:C BiCMOS technology. The conversion gain is 22 dB from 60 GHz to 5 GHz without IF amplification. This front-end includes an LNA, a mixer and a 56 GHz PLL. The measured output 1-dB compression point is -5dBm

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2006 European Microwave Integrated Circuits Conference

自引率

0.00%

发文量

期刊最新文献

Capabilities of a 10 GHz MEMS based VCO CMOS Large Signal and RF Noise Model for CAD LF noise analysis of InP/GaAsSb/InP and InP/InGaAs/InP HBTs Temperature analysis of AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy and Transient Interferometric Mapping Compact RF Modeling of Multiple-Gate MOSFETs