微晶有机半导体的形成、生长和电子特性

Barry P Rand
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引用次数: 0

摘要

尽管有机半导体单晶的迁移率已被报道,但制造薄膜晶体仍然很困难。我们将展示我们在理解晶体形成、外延和传输方面的努力。特别是,我们将讨论我们为实现具有100微米尺度晶粒的许多有机半导体的无针孔薄膜所做的努力,以及材料如何能够经历从非晶到晶体的转变与热性能的良好关联。同外延研究揭示了这些薄膜中点和线缺陷形成的证据,表明同外延并不总是无应变的。由大颗粒rubrene薄膜制成的晶体管显示电荷载流子迁移率高达3.5 cm2 V-1 s-1,非常接近单晶值,突出了它们的实际应用潜力。最后,我们将展示在晶体有机模板上实现不同分子材料的异质外延生长的努力。
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Formation, growth, and electronic properties of microcrystalline organic semiconductors
Even though record organic semiconductor mobilities are reported for organic semiconductor single crystals, making thin film crystals remains difficult. We will show our efforts to understand crystal formation, epitaxy, and transport. In particular, we will discuss our efforts to realize pinhole free films of numerous organic semiconductors with 100s microns scale grains, and how the materials able to undergo a transition from amorphous to crystalline correlate well with thermal properties. Homoepitaxial studies uncover evidence of point and line defect formation in these films, indicating that homoepitaxy is not always strain-free. Transistors made out of large-grained films of rubrene display charge carrier mobility of up to 3.5 cm2 V–1 s–1, very close to single crystal values, highlighting their potential for practical application. Finally, we will show efforts in achieving heteroepitaxial growth of a different molecular material on top of a crystalline organic template.
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