具有高隔离度的低轮廓宽带双极化贴片子阵列

Hong‐wei Yu, Y. Jiao
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引用次数: 0

摘要

提出了一种一维无限阵列中的低轮廓宽带双极化贴片1×4子阵列。采用双差分l探针耦合馈电技术,降低了交叉极化电平,提高了阻抗带宽。建议子阵列的总大小为143×612.5×26mm3。仿真结果表明,两种极化的14db阻抗带宽均为300MHz (1.1-1.4GHz)。隔离度优于51dB。实现增益范围为11dB ~ 13dB。两种极化的增益差小于0.25dB。H-pol在HPBW范围内的相对交叉极化电平为- 37dB, V-pol在±30°范围内的相对交叉极化电平为- 40dB。
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Low profile broadband dual polarized patch sub-array with high isolation
A low profile broadband dual polarized patch 1×4 sub-array in a 1-D infinite array is presented. It uses double differential L-probe coupled feeding technique to reduce cross-polarization levels and to enhance impedance bandwidth. The total size of proposed sub-array is 143×612.5×26mm3. The simulated results indicate a 14-dB impedance bandwidth of 300MHz (1.1–1.4GHz) for both polarizations. The isolation is better than 51dB. The realized gains are from 11dB to 13dB. The gain difference between the two polarizations is less than 0.25dB. The relative cross polarization levels are −37dB within the HPBW range for H-pol, and −40dB within ±30°for V-pol.
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