L. Knoll, A. Mihaila, F. Bauer, V. Sundaramoorthy, E. Bianda, R. Minamisawa, L. Kranz, M. Bellini, U. Vemulapati, H. Bartolf, S. Kicin, S. Skibin, C. Papadopoulos, Munaf T. A. Rahimo
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引用次数: 21
摘要
我们将研究在半桥电路中实现电稳健性mosfet的方法。研究人员首次制造出具有14μm (p1.0)到26μm (pl.8)不同间距的3.3kV SiC mosfet，能够承受高达10μs的短路脉冲和高达15倍标称电流的9ms浪涌电流事件。LinPak半桥模块已经制造出来，与硅IGBT/二极管半桥相比，开关损耗降低了90%以上。
Robust 3.3kV silicon carbide MOSFETs with surge and short circuit capability
An approach to implement electrically robust MOSFETs in a functioning half-bridge will be investigated. For the first time, reverse conducting 3.3kV SiC MOSFETs have been fabricated with dilferent cell pitches from 14μm (p1.0) to 26μm (pl.8) that are able to withstand short circuit pulse of up to 10μs and a 9ms surge current event up to 15x the nominal current. LinPak half-bridge modules have been fabricated showing reduction of the switching loss by more than 90% compared to a silicon IGBT/diode half bridge.
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