Jung Hun Seo, B. Kim, Jong Myeong Lee, H. Park, J. Yun, Youngseop Rah, G. Choi, U. Chung, J. Moon
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The improved CVD-Al metallization for deep small contact filling using selective wetting process
The new barrier metal structure using selective wetting layer was proposed. This process using physical vapor deposition (PVD) Ti as the controlling layer for conformal chemical vapor deposition (CVD) Al layer shows an excellent filling capability for deep small contact and good electrical properties as well as the remarkable surface morphology, which can be applied for the new metallization process such as metal contacts and via holes filling.
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