S. Matthias, F. Muller, R. Hillebrand, J. Schilling, U. Gosele
{"title":"电化学蚀刻制备三维硅基光子晶体","authors":"S. Matthias, F. Muller, R. Hillebrand, J. Schilling, U. Gosele","doi":"10.1109/GROUP4.2004.1416723","DOIUrl":null,"url":null,"abstract":"We show a general concept to structure standard silicon wafers with an almost perfect three-dimensional shape, which is versatile, accurate and fast. For characterisation we grow photonic crystals with a complete photonic bandgap.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Three-dimensional silicon-based photonic crystals fabricated by electrochemical etching\",\"authors\":\"S. Matthias, F. Muller, R. Hillebrand, J. Schilling, U. Gosele\",\"doi\":\"10.1109/GROUP4.2004.1416723\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We show a general concept to structure standard silicon wafers with an almost perfect three-dimensional shape, which is versatile, accurate and fast. For characterisation we grow photonic crystals with a complete photonic bandgap.\",\"PeriodicalId\":299690,\"journal\":{\"name\":\"First IEEE International Conference on Group IV Photonics, 2004.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"First IEEE International Conference on Group IV Photonics, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2004.1416723\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"First IEEE International Conference on Group IV Photonics, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2004.1416723","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Three-dimensional silicon-based photonic crystals fabricated by electrochemical etching
We show a general concept to structure standard silicon wafers with an almost perfect three-dimensional shape, which is versatile, accurate and fast. For characterisation we grow photonic crystals with a complete photonic bandgap.