(Tb,Gd)3Al5O12:Ce单晶薄膜的生长和发光性能

International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014) Pub Date : 2014-05-26 DOI:10.1109/OMEE.2014.6912383

Y. Zorenko, V. Gorbenko, T. Zorenko, Y. Vasyl’kiv, K. Fabisiak, H. Wrzesinski, M. Nikl, J. Mares, A. Beitlerová, R. Kučerková, A. Fedorov

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引用次数: 1

摘要

本工作致力于研究Ce掺杂Tb3-xGdxAl5O12:Ce石榴石(x=0÷2.5)在ppo - b2o3助焊剂熔体溶液中采用液相外延(LPE)法生长的单晶薄膜的生长过程和发光性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Growth and luminescent properties of (Tb,Gd)3Al5O12:Ce single crystalline films

This work is dedicated to studying the growth processes and luminescent properties of the single crystalline films of Ce doped Tb_3-xGd_xAl₅O₁₂:Ce garnets, x=0÷2.5, grown by the Liquid Phase Epitaxy (LPE) method from melt-solutions based on the PbO-B₂O₃ flux.

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International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)

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