碲化汞镉的光致发光——一个历史的视角。第一部分:1966-1996年

M. Ruzhevich, K. Mynbaev
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引用次数: 0

摘要

本文对红外光电子学中最重要的材料之一碲化汞镉(HgCdTe)的光致发光研究进行了历史回顾。审查的第一部分考虑了在该材料技术发展的早期(1966-1996年)进行的研究结果。这些研究主要是利用液相外延生长的大块晶体和外延膜样品进行的。研究结果可以识别HgCdTe中光学跃迁的性质,包括激子发射,带间重组,供体-受体对重组以及浅层和深层重组,这对材料技术的成熟有很大帮助。
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Photoluminescence in Mercury Cadmium Telluride – a Historical Perspective. Part I: 1966-1996
This work presents a historical perspective on the studies of photoluminescence in mercury cadmium telluride (HgCdTe), one of the most important materials of infrared photoelectronics. The first part of the review considers the results of the studies performed during the early years of the development of the technology of this material (1966-1996). These studies were carried out mostly using samples of bulk crystals and epitaxial films grown by liquid-phase epitaxy. The results of the studies allowed for identification of the nature of optical transitions in HgCdTe, including excitonic emission, interband recombination, donor-acceptor pair recombination and recombination via shallow and deep levels, which greatly helped in maturing the material technology.
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