10Gb/s突发模式激光二极管驱动器,实现突发节能

H. Koizumi, M. Togashi, M. Nogawa, Y. Ohtomo
{"title":"10Gb/s突发模式激光二极管驱动器,实现突发节能","authors":"H. Koizumi, M. Togashi, M. Nogawa, Y. Ohtomo","doi":"10.1109/ISSCC.2012.6177070","DOIUrl":null,"url":null,"abstract":"A burst-mode laser diode driver circuit (BLDD) for 10Gb/s-class passive optical network (10G-EPON) systems reduces power consumption by 94% while the laser diode (LD) is in the off state. The off-state optical launch power is kept at less than -45dBm while meeting the transistor breakdown condition. The BLDD recovers to the active state within 16ns, which is 46x faster than that of a previously reported burst-mode transmitter, and the fast recovery makes efficient burst-by-burst power saving possible.","PeriodicalId":255282,"journal":{"name":"2012 IEEE International Solid-State Circuits Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 10Gb/s burst-mode laser diode driver for burst-by-burst power saving\",\"authors\":\"H. Koizumi, M. Togashi, M. Nogawa, Y. Ohtomo\",\"doi\":\"10.1109/ISSCC.2012.6177070\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A burst-mode laser diode driver circuit (BLDD) for 10Gb/s-class passive optical network (10G-EPON) systems reduces power consumption by 94% while the laser diode (LD) is in the off state. The off-state optical launch power is kept at less than -45dBm while meeting the transistor breakdown condition. The BLDD recovers to the active state within 16ns, which is 46x faster than that of a previously reported burst-mode transmitter, and the fast recovery makes efficient burst-by-burst power saving possible.\",\"PeriodicalId\":255282,\"journal\":{\"name\":\"2012 IEEE International Solid-State Circuits Conference\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2012.6177070\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2012.6177070","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

一种用于10Gb/s级无源光网络(10G-EPON)系统的突发模式激光二极管驱动电路(BLDD)在激光二极管(LD)处于关闭状态时可降低94%的功耗。在满足晶体管击穿条件下,光发射功率保持在-45dBm以下。BLDD在16ns内恢复到活动状态,比先前报道的突发模式发射机快46倍,并且快速恢复使得有效的突发-突发省电成为可能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A 10Gb/s burst-mode laser diode driver for burst-by-burst power saving
A burst-mode laser diode driver circuit (BLDD) for 10Gb/s-class passive optical network (10G-EPON) systems reduces power consumption by 94% while the laser diode (LD) is in the off state. The off-state optical launch power is kept at less than -45dBm while meeting the transistor breakdown condition. The BLDD recovers to the active state within 16ns, which is 46x faster than that of a previously reported burst-mode transmitter, and the fast recovery makes efficient burst-by-burst power saving possible.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A 464GOPS 620GOPS/W heterogeneous multi-core SoC for image-recognition applications A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth A 2.7nJ/b multi-standard 2.3/2.4GHz polar transmitter for wireless sensor networks A 60GHz outphasing transmitter in 40nm CMOS with 15.6dBm output power A capacitance-to-digital converter for displacement sensing with 17b resolution and 20μs conversion time
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1