Extraction of model card in metal oxide thin-film transistor by fitting measured curves with RPI model and simulation of circuits

In this paper, a simple and physical-based extraction technique for model card in metal oxide thin-film transistors (TFTs) is proposed by fitting measured curves with RPI model. Using the obtained model card, we implemented the RPI model in circuit simulators. The single group of model parameters was extracted by using the algorithm of parameter extraction. By fitting measured curve with RPI model, the model card can be obtained. The validity of the circuit is verified by comparisons with measured data and the simulation results. The results indicate that it is a valuable tool for circuit design.