MESFET非线性应用于预失真线性器设计

1992 IEEE Microwave Symposium Digest MTT-S Pub Date : 1992-06-01 DOI:10.1109/MWSYM.1992.188148

R. Tupynamba, E. Camargo

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引用次数: 20

摘要

采用低漏偏置的mesfet，提出了三种不同的预失真线性器电路拓扑。本文详细介绍了一种采用两个1 μ m门长器件的c波段线性化器的设计，其结果与使用肖特基二极管的传统设计结果相比较。线性化器将工作在6 GHz的10 w功率放大器的互调产物减少了10 dB，并减少了高达4 dB的回退

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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MESFET nonlinearities applied to predistortion linearizer design

Three different circuit topologies of predistortion linearizers are proposed using MESFETs biased at low drain bias. The design of a C-band linearizer using two 1- mu -gate-length devices is detailed, and the achieved results compare favorably with conventional designs which use Schottky diodes. The linearizer reduced by 10 dB the intermodulation products of a 10-W power amplifier operating at 6 GHz, and up to 4-dB back-off.<>

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1992 IEEE Microwave Symposium Digest MTT-S

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