多孔硅中Pt纳米颗粒对MISFET传感器性能的影响

2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2018-04-01 DOI:10.1109/ELNANO.2018.8477500

O. Kutova, T. Borodinova, M. Dusheiko, B. Loboda, T. Obukhova, S. V. Tkach

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引用次数: 1

摘要

本文研究了多孔硅中Pt纳米颗粒对FET传感器性能的影响。结果表明，多孔硅与金属纳米颗粒的结合使过氧化氢传感器的响应时间缩短，灵敏度提高至8 mkA/%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Influence of Pt Nanoparticles in Porous Silicon on Performance of MISFET Sensor

In the paper influence of Pt nanoparticles in porous silicon on FET sensor performance is investigated. It is shown that combination of porous silicon with metal nanoparticles decreases response time and increases sensitivity of hydrogen peroxide sensor up to 8 mkA/%.

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2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO)

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