Al2O3基质孔隙中RbNO3纳米复合材料介电性能研究

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Integrated Ferroelectrics Pub Date : 2023-09-02 DOI:10.1080/10584587.2023.2227052

Hoai Thuong Nguyen, Sergey V. Baryshnikov, A. Yu. Milinsky, Elena V. Stukova

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Dielectric Properties of a Nanocomposite from RbNO₃ Incorporated into Pores of Al₂O₃ Matrix

Abstract The present work reports the experimental results of studying linear and nonlinear dielectric properties of a ferroelectric nanocomposite from RbNO3 embedded in pores of an Al2O3 matrix. The dielectric relaxation times were determined above and below the phase transition temperature of pure RbNO3 (436 K). It was shown that for RbNO3 incorporated into nanosized pores of the Al2O3 matrix, a decrease in the phase transition temperature and a change in relaxation times were observed.

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来源期刊

Integrated Ferroelectrics 工程技术-工程：电子与电气

CiteScore

1.40

自引率

0.00%

发文量

179

审稿时长

3 months

期刊介绍： Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.