Cu掺杂对CdZnS薄膜性能的影响

IF 1.2 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Chalcogenide Letters Pub Date : 2023-11-01 DOI:10.15251/cl.2023.2011.789
K. A. Mohammed, R. A. Talib, B. Bhavani, N. H. J. Al Hasan, A. Kareem, F. H. Alsultany, R. S. Zabibah, M. A. Alkhafaji, S. Sharma
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引用次数: 0

摘要

通过化学浴沉积法制备了CdZnS薄膜,考察了Cu掺杂对薄膜特性的影响。在薄膜中加入Cu离子以改变其光学、结构和形态特征。这些发现表明,Cu掺杂可以用来修饰CdZnS薄膜的光学特性。利用x射线衍射仪(XRD)和x射线能谱仪(EDAX)分析了薄膜的组成比和结构特征。利用场发射扫描电子显微镜(FESEM)技术对所制备薄膜的表面形貌进行了研究。制备的薄膜具有纤维状和纳米级的形貌。此外,利用紫外可见光谱技术对薄膜的光学性质进行了表征。Cu-CdZnS薄膜的直接带隙为2.64 eV,间接带隙为2.4 eV。
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The role of Cu doping in properties of CdZnS thin films
CdZnS thin films created via chemical bath deposition were examined to see how Cu doping affected their characteristics. Cu ions were added to the films in order to change their optical, structural, and morphological characteristics. These findings suggest that Cu doping can be used to modify the optical characteristics of CdZnS thin films. By using Xray diffraction (XRD) and the energy dispersive analysis of X-ray method (EDAX), we were able to investigate the compositional ratio as well as the structural features of the films. The field emission scanning electron microscopy (FESEM) technique was utilized in order to investigate the surface morphology of the produced films. The morphology of prepared films was fiber-like and in nanoscale. In addition, the UV–vis spectroscopy technique was utilized in order to characterize the optical properties of thin films. The prepared Cu-CdZnS film was found to have direct band gap equal to 2.64 eV and indirect gap equal to 2.4 eV.
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来源期刊
Chalcogenide Letters
Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
1.80
自引率
20.00%
发文量
86
审稿时长
1 months
期刊介绍: Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.
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