Seung Jo Yoo, Tae Gyu Yun, Jae Hyuck Jang, Ji-Hyun Lee, Changhyun Park, Sung-Yoon Chung
{"title":"电子束诱导外延 LaCoO3 薄膜中氧空位的形成","authors":"Seung Jo Yoo, Tae Gyu Yun, Jae Hyuck Jang, Ji-Hyun Lee, Changhyun Park, Sung-Yoon Chung","doi":"10.1007/s13391-023-00468-7","DOIUrl":null,"url":null,"abstract":"<div><p>The formation of oxygen vacancies in heteroepitaxial LaCoO<sub>3</sub> thin films deposited on different substrates was investigated by using electron beam irradiation in atomic-scale scanning transmission electron microscopy (STEM). As the electron beam irradiation intensified, distinctive dark stripe patterns were identified in high-angle annular dark-field STEM images, demonstrating the formation and subsequent ordering of oxygen vacancies. A comprehensive quantitative analysis of the lattice parameter changes verified the significant expansion of unit cells associated with the presence of oxygen vacancies. In particular, a uniform distribution of these expanded unit cells was observed in the films under large tensile strain. These experimental findings emphasize the significant role of strain in generating oxygen vacancies in perovskite oxide materials.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 4","pages":"491 - 499"},"PeriodicalIF":2.1000,"publicationDate":"2023-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electron-Beam-Induced Formation of Oxygen Vacancies in Epitaxial LaCoO3 Thin Films\",\"authors\":\"Seung Jo Yoo, Tae Gyu Yun, Jae Hyuck Jang, Ji-Hyun Lee, Changhyun Park, Sung-Yoon Chung\",\"doi\":\"10.1007/s13391-023-00468-7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The formation of oxygen vacancies in heteroepitaxial LaCoO<sub>3</sub> thin films deposited on different substrates was investigated by using electron beam irradiation in atomic-scale scanning transmission electron microscopy (STEM). As the electron beam irradiation intensified, distinctive dark stripe patterns were identified in high-angle annular dark-field STEM images, demonstrating the formation and subsequent ordering of oxygen vacancies. A comprehensive quantitative analysis of the lattice parameter changes verified the significant expansion of unit cells associated with the presence of oxygen vacancies. In particular, a uniform distribution of these expanded unit cells was observed in the films under large tensile strain. These experimental findings emphasize the significant role of strain in generating oxygen vacancies in perovskite oxide materials.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>\",\"PeriodicalId\":536,\"journal\":{\"name\":\"Electronic Materials Letters\",\"volume\":\"20 4\",\"pages\":\"491 - 499\"},\"PeriodicalIF\":2.1000,\"publicationDate\":\"2023-10-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electronic Materials Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s13391-023-00468-7\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronic Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s13391-023-00468-7","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Electron-Beam-Induced Formation of Oxygen Vacancies in Epitaxial LaCoO3 Thin Films
The formation of oxygen vacancies in heteroepitaxial LaCoO3 thin films deposited on different substrates was investigated by using electron beam irradiation in atomic-scale scanning transmission electron microscopy (STEM). As the electron beam irradiation intensified, distinctive dark stripe patterns were identified in high-angle annular dark-field STEM images, demonstrating the formation and subsequent ordering of oxygen vacancies. A comprehensive quantitative analysis of the lattice parameter changes verified the significant expansion of unit cells associated with the presence of oxygen vacancies. In particular, a uniform distribution of these expanded unit cells was observed in the films under large tensile strain. These experimental findings emphasize the significant role of strain in generating oxygen vacancies in perovskite oxide materials.
期刊介绍：
Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.
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