基于两种不同尺寸分环谐振器的300 ghz频段双频带阻滤波器

IF 0.6 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC IEICE Transactions on Electronics Pub Date : 2023-01-01 DOI:10.1587/transele.2023ecp5004
Akihiko Hirata
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引用次数: 0

摘要

对于6G移动通信,实现与无线通信系统占用带宽相适应的300ghz带通滤波器以防止系统间干扰至关重要。本文设计了一种由两种不同尺寸的分环谐振器(SRR)单元组成的300 ghz频段双带阻滤波器。在200 μm厚的石英衬底上用5 μm厚的金图案形成SRR晶胞。当两个不同尺寸的SRR单元格在同一石英衬底上交替放置且SRR单元格尺寸大于260 μm时,双带带阻滤波器的阻带与由单个SRR单元格组成的带阻滤波器的阻带基本相同。双频带阻滤波器在297.4 GHz处的插入损耗为1.8 dB, 3db通带变为16.0 GHz (290.4-306.4 GHz)。两个阻带的衰减都大于20 dB。制作了6种不同排列方式和不同SRR单元格间距的双带阻滤波器样机,阐明了不同尺寸SRR单元格间距和排列方式对双带阻滤波器传输特性的影响。
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300-GHz-Band Dual-Band Bandstop Filter Based on Two Different Sized Split Ring Resonators
For 6G mobile communications, it is important to realize a 300 GHz bandpass filter that fits the occupied bandwidth of wireless communication system to prevent inter-system interference. This paper presents the design of a 300-GHz-band dual-band bandstop filter composed of two types of different sized split ring resonator (SRR) unit cells. The SRR unit cells are formed by a 5-μm-thick gold pattern on a 200-μm-thick quartz substrate. When two different-sized SRR unit cells are placed alternately on the same quartz substrate and the SRR unit cell size is over 260 μm, the stopbands of the dual-band bandstop filter are almost the same as those of the bandstop filter, which is composed of a single SRR unit cell. The insertion loss of the dual-band bandstop filter at 297.4 GHz is 1.8 dB and the 3-dB passband becomes 16.0 GHz (290.4-306.4 GHz). The attenuation in the two stopbands is greater than 20 dB. Six types of dual-band bandstop filters with different arrangement and different distance between SRR unit cells are prototyped, and the effect of the distance and arrangement between different sized SRR unit cells on the transmission characteristics of dual-band bandstop filters were clarified.
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来源期刊
IEICE Transactions on Electronics
IEICE Transactions on Electronics 工程技术-工程:电子与电气
CiteScore
1.00
自引率
20.00%
发文量
79
审稿时长
3-6 weeks
期刊介绍: Currently, the IEICE has ten sections nationwide. Each section operates under the leadership of a section chief, four section secretaries and about 20 section councilors. Sections host lecture meetings, seminars and industrial tours, and carry out other activities. Topics: Integrated Circuits, Semiconductor Materials and Devices, Quantum Electronics, Opto-Electronics, Superconductive Electronics, Electronic Displays, Microwave and Millimeter Wave Technologies, Vacuum and Beam Technologies, Recording and Memory Technologies, Electromagnetic Theory.
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