Synthesis of Erbium Deuterides via Deuterium Ion Implantation into Erbium Thin Films

AbstractAn experimental study of a synthesis technique in which deuterium ions are implanted into thin films of erbium to form erbium deuterides is presented. Results from thermal desorption spectroscopy indicate the synthesis of multiple hydride phases has occurred, including ErD3 and ErD2. The findings also indicate that, for erbium deuteride synthesis via ion beam bombardment, elevated substrate temperatures are not required to promote deuterium uptake in the film. Stoichiometries of up to ErD0.21 were achieved for a 400-nm film exposed to a 1000-eV ion beam for 5 h at a deuterium ion fluence of 3.6 × 1022 m−2. Over the tested experimental conditions, deuterium uptake was found to scale proportionally with deuterium ion fluence and ion energy. The presence of deuterium in the film was confirmed by secondary ion mass spectrometry.Keywords: Deuteriumerbiumion implantationmaterials science Disclosure StatementNo potential conflict of interest was reported by the authors.Data Availability StatementThe data sets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.Additional informationFundingThe authors did not receive support from any other organization for the submitted work.