通过磁静电相互作用控制磁微线中的单畴壁传播

IF 6.7 3区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Journal of Science: Advanced Materials and Devices Pub Date : 2024-03-28 DOI:10.1016/j.jsamd.2024.100712
Paula Corte-Leon , Alvaro Gonzalez , Juan Maria Blanco , Valentina Zhukova , Mihail Ipatov , Julian Gonzalez , Arcady Zhukov
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引用次数: 0

摘要

据报道,在非晶微米和亚微米导线中,通过单畴壁(DW)传播实现了超快磁化切换。然而,利用 DW 传播的未来设备的性能取决于 DW 传播的可控程度。在本文中,我们提出了一种新方法,利用磁性较软的微导线产生的杂散磁场,有效控制由两根磁性微导线组成的特殊设计阵列中的单根 DW 传播。我们通过实验证明,在这种线性阵列中,磁性较硬的富铁微线的 DW 速度会受到磁性较软的富钴微线杂散磁场的影响。此外,在这种线性阵列中,富钴微线产生的杂散磁场会将畴壁困在富铁微线中。观察到的磁静电相互作用效果取决于富钴微线在这种线性阵列中的位置。在这种线性阵列中观察到的可控畴壁传播是一种有用的工具,可用于以简单、灵活的方式对显示自发磁双稳态的富钴微线中的单个 DW 进行可控捕获和制动。
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Controlling of the single domain wall propagation in magnetic microwires by magnetostatic interaction

Ultrafast magnetization switching through the single domain wall (DW) propagation has been reported in amorphous micrometric and submicrometric wires. However the performance of prospective devices utilizing DW propagation is determined by the degree to which DW propagation can be controlled. In this article, we propose a novel method for effectively controlling the single DW propagation in a specially designed array consisting of two magnetic microwires by the stray field from magnetically softer microwires. We have experimentally demonstrated that the DW velocity of magnetically harder Fe-rich microwire in such a linear array is affected by the stray field of magnetically softer Co-rich microwire. Additionally, the domain wall can be trapped in the Fe-rich microwire by the stray field produced by the Co-rich microwire in such a linear array. The observed effect of magnetostatic interaction depends on the position of the Co-rich microwire in such a linear array. Controllable domain wall propagation observed in such a linear array can be a useful tool for simple and more flexible ways of controllable trapping and braking of single DWs in Fe-rich microwires showing spontaneous magnetic bistability.

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来源期刊
Journal of Science: Advanced Materials and Devices
Journal of Science: Advanced Materials and Devices Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
11.90
自引率
2.50%
发文量
88
审稿时长
47 days
期刊介绍: In 1985, the Journal of Science was founded as a platform for publishing national and international research papers across various disciplines, including natural sciences, technology, social sciences, and humanities. Over the years, the journal has experienced remarkable growth in terms of quality, size, and scope. Today, it encompasses a diverse range of publications dedicated to academic research. Considering the rapid expansion of materials science, we are pleased to introduce the Journal of Science: Advanced Materials and Devices. This new addition to our journal series offers researchers an exciting opportunity to publish their work on all aspects of materials science and technology within the esteemed Journal of Science. With this development, we aim to revolutionize the way research in materials science is expressed and organized, further strengthening our commitment to promoting outstanding research across various scientific and technological fields.
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