基于螺旋波导的紧凑型铌酸锂迈克尔逊干涉仪调制器

IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-04-19 DOI:10.1109/JSTQE.2024.3391693
Amr O. Ghoname;Ahmed E. Hassanien;Lynford L. Goddard;Songbin Gong
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引用次数: 0

摘要

我们在基于螺旋形波导的铌酸锂薄膜上展示了超紧凑、高效的电光迈克尔逊干涉仪调制器。该调制器利用 Z 切面铌酸锂折射率的面内各向同性,实现了空间效率高的螺旋波导,并通过底部和顶部电极进行调制。利用干法蚀刻铌酸锂实现了单片式光肋波导,其底部和顶部包层分别由二氧化硅和 SU-8 聚合物制成。由于对螺旋内半径和相邻匝间间隙进行了优化设计,拟议的调制器需要 175 × 175 μm2 的总面积才能容纳 9 毫米长的波导。电极之间的垂直距离设计为半波电压长度乘积(${{V}_{pi\}}L$)小于 2.02 V.cm,光传播损耗低至 1.3 dB/cm。当螺旋总长度分别为 9 毫米和 1.2 毫米时,所制造调制器的 3 dB 光电带宽在 4.2 千兆赫和 17.8 千兆赫之间变化。紧凑型调制器结构满足了现代数据中心和电信网络对高密度光子集成电路的迫切需求。
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Compact Lithium Niobate Michelson Interferometer Modulators Based on Spiral Waveguides
We demonstrate ultra-compact and highly efficient electro-optic Michelson interferometer modulators on thin film lithium niobate based on spiral-shaped waveguides. The modulator utilizes the in-plane isotropy of the Z-cut lithium niobate refractive index to achieve space-efficient spiral waveguides that are modulated using bottom and top electrodes. Monolithic optical rib waveguides are achieved using dry etching of lithium niobate with bottom and top cladding layers made of silicon dioxide and SU-8 polymer, respectively. The proposed modulator requires a total area of 175 × 175 μm 2 to accommodate a 9-mm long waveguide, owing to the optimized design of the spiral inner radius and the gap between adjacent turns. The vertical distance between electrodes is engineered to achieve a half-wave-voltage-length product ( ${{V}_{\pi}}L$ ) less than 2.02 V.cm with low optical propagation loss of 1.3 dB/cm. The 3-dB electro-optic bandwidth of the fabricated modulators varied between 4.2 GHz and 17.8 GHz for total spiral lengths of 9 mm and 1.2 mm, respectively. The compact modulator architecture fulfills the pressing demand for high-density photonic integrated circuits in modern data centers and telecommunication networks.
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来源期刊
IEEE Journal of Selected Topics in Quantum Electronics
IEEE Journal of Selected Topics in Quantum Electronics 工程技术-工程:电子与电气
CiteScore
10.60
自引率
2.00%
发文量
212
审稿时长
3 months
期刊介绍: Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.
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