新型内存电路可承受高温

{"title":"新型内存电路可承受高温","authors":"R. Mark Wilson","doi":"10.1063/pt.uqgw.zbat","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":503729,"journal":{"name":"Physics Today","volume":" May","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"New memory circuit can handle the heat\",\"authors\":\"R. Mark Wilson\",\"doi\":\"10.1063/pt.uqgw.zbat\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":503729,\"journal\":{\"name\":\"Physics Today\",\"volume\":\" May\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physics Today\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1063/pt.uqgw.zbat\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physics Today","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/pt.uqgw.zbat","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}