1700 PPI Micro-LED 器件的光学、电气和机械可靠性

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Reliability Pub Date : 2024-06-03 DOI:10.1016/j.microrel.2024.115431

Kefeng Wang , Zehua Chen , Haojie Zhou , Xiaoxiao Ji , Xiuzhen Lu , Luqiao Yin , Jianhua Zhang

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引用次数: 0

摘要

随着 Micro-LED 显示设备在先进显示领域的广泛应用，设备的高可靠性已成为 Micro-LED 在 VR/AR、便携式显示器和柔性显示器等众多显示领域应用的关键问题之一。通过 AuIn 倒装芯片键合技术将 512 × 384 绿色 Micro-LED 0.39 英寸阵列与基板集成在一起，该阵列具有 1700 PPI，像素间距为 15 μm。测量了 Micro-LED 器件在 85 °C/85 % RH 条件下不同时间老化后的平均亮度、电致发光（EL）光谱和 I-V 特性，以评估 Micro-LED 器件的光学和电气可靠性。通过剪切试验评估了老化 336 小时后 Micro-LED 器件的机械可靠性。随着老化时间增加到 336 h，Micro-LED 器件的平均亮度从 2.08 × 104 nit 下降到 1.64 × 104 nit，导通电阻从 2.30 Ω 增加到 2.82 Ω。

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Optical, electrical, and mechanical reliability of 1700 PPI Micro-LED device

With the Micro-LED display device being widely used in the advanced display fields, the high reliability of device had become one of the key issues for applications of Micro-LED in many display fields such as VR/AR, portable displays, and flexible displays. The 512 × 384 green Micro-LEDs 0.39 in. array with 1700 PPI featuring a pixel pitch of 15 μm was integrated with the substrate by the AuIn flip-chip bonding. The average brightness, electroluminescence (EL) spectra, and I-V characteristics of the Micro-LED device aged at 85 °C/85 % RH for different time were measured to evaluate the optical and electrical reliability of the Micro-LED device. The mechanical reliability of the Micro-LED device after 336 h of aging was evaluated by shear test. The average brightness of the Micro-LED device decreased from 2.08 × 10⁴ nit to 1.64 × 10⁴ nit and the on-resistance of the Micro-LED device increased from 2.30 Ω to 2.82 Ω with the aging time increased to 336 h. The Micro-LED device was broken up with the shear strength value of 12.06 MPa, and the shear strength was only reduced by 8.25 % compared with that measured before aging.

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.