掺杂 p 型缓冲层对（Zn,Fe）Te 稀磁半导体结构和磁性能的影响

Journal of Bangladesh Academy of Sciences Pub Date : 2024-06-15 DOI:10.3329/jbas.v48i1.68708

Indrajit Saha, Shinji Kuroda

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摘要

我们通过分子束外延（MBE）技术研究了在富碲通量条件下生长的 Zn1-xFexTe 薄膜的结构和磁性能，这些薄膜在未掺杂和掺杂氮（N）受体的 ZnTe 缓冲层上的铁成分几乎相同，x = 1.3%。通过 XRD 和 XAFS 进行的结构分析表明，在这两种情况下，Zn0.987Fe0.013Te 薄膜主要由纯稀释相组成，在锌蓝晶（ZB）ZnTe 的 Zn 位上有取代的铁原子。然而，使用 SQUID 进行的磁化测量显示，这些薄膜的磁性能截然不同；磁化率与磁场（M-H）呈线性关系，这是 Zn0.987Fe0.013Te 薄膜典型的范-弗勒克顺磁行为。在未掺杂 ZnTe 上生长的 013Te 薄膜变成了普通顺磁行为，在掺杂 N 的 ZnTe 缓冲层上生长的薄膜具有 S 型 M-H 曲线，[N] ≈ 1020 cm-3，这可能反映了 N 受体提供的界面空穴对取代铁价态的影响。48(1); 27-34：2024 年 6 月

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Effect of p-type doped buffer layer on the structural and magnetic properties of (Zn,Fe)Te dilute magnetic semiconductor

We have studied the structural and magnetic properties of Zn1-xFexTe thin films grown under Te-rich flux condition with almost same Fe composition, x = 1.3%, on both undoped and nitrogen (N) acceptor doped ZnTe buffer layer by molecular beam epitaxy (MBE). Structural analysis by XRD and XAFS reveals that Zn0.987Fe0.013Te films are mainly composed of pure diluted phase with substitutional Fe atoms on the Zn-site in the zinc-blende (ZB) ZnTe in both cases. However, the magnetization measurement using SQUID shows distinctly different magnetic properties among these films; a linear dependence of magnetization on magnetic field (M-H), typical of van-Vleck paramagnetic behavior of Zn0.987Fe0.013Te film grown over undoped ZnTe turns into ordinary paramagnetic behavior with S-shape M-H curve for film grown on N-doped ZnTe buffer layer, [N] ≈ 1020 cm-3 which may reflect the impact of interfacial holes provided by N-acceptors on the valence state of substitutional Fe. J. Bangladesh Acad. Sci. 48(1); 27-34: June 2024

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Journal of Bangladesh Academy of Sciences

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