850 °C 时在 Ar-5H2O-(5H2) 中生长的 Cr2O3 鳞片的微观结构

IF 2.1 3区 材料科学 Q2 METALLURGY & METALLURGICAL ENGINEERING Oxidation of Metals Pub Date : 2024-07-29 DOI:10.1007/s11085-024-10287-2
Thuan Dinh Nguyen, Jianqiang Zhang, David J. Young
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引用次数: 0

摘要

模型合金 Fe-20Cr(重量百分比)在两种混合气体 Ar-5H2O-(5H2)(体积百分比)中于 850 °C 下氧化。合金在两种气体中都形成了 Cr2O3 鳞片。Cr2O3 鳞片在 Ar-5H2O-5H2 中发展较快,并含有细孔,而在 Ar-5H2O 中生长的鳞片则致密。使用惰性二氧化硅标记的实验表明,Ar-5H2O-(5H2)中的 Cr2O3 鳞片生长主要受向外的 Cr 扩散控制。根据晶界扩散效应进行调整后,瓦格纳理论成功地描述了氢效应,前提是 Cr2O3 鳞片是 n 型的。
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Microstructure of Cr2O3 Scales Grown in Ar-5H2O-(5H2) at 850 °C

Model alloy, Fe-20Cr (wt%), was oxidized in two gas mixtures Ar-5H2O-(5H2) (vol%) at 850 °C. The alloy formed Cr2O3 scales in both gases. The Cr2O3 scale developed faster in Ar-5H2O-5H2 and contained fine pores, whilst that grown in Ar-5H2O was dense. Experiments with inert SiO2 marker revealed that the Cr2O3 scale growth in Ar-5H2O-(5H2) was controlled mainly by outward Cr diffusion. When adjusted for grain boundary diffusion effects, Wagner’s theory was successful in describing the hydrogen effect, provided that the Cr2O3 scales are n-type.

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来源期刊
Oxidation of Metals
Oxidation of Metals 工程技术-冶金工程
CiteScore
5.10
自引率
9.10%
发文量
47
审稿时长
2.2 months
期刊介绍: Oxidation of Metals is the premier source for the rapid dissemination of current research on all aspects of the science of gas-solid reactions at temperatures greater than about 400˚C, with primary focus on the high-temperature corrosion of bulk and coated systems. This authoritative bi-monthly publishes original scientific papers on kinetics, mechanisms, studies of scales from structural and morphological viewpoints, transport properties in scales, phase-boundary reactions, and much more. Articles may discuss both theoretical and experimental work related to gas-solid reactions at the surface or near-surface of a material exposed to elevated temperatures, including reactions with oxygen, nitrogen, sulfur, carbon and halogens. In addition, Oxidation of Metals publishes the results of frontier research concerned with deposit-induced attack. Review papers and short technical notes are encouraged.
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