用于先进电子器件的低维卤化物过氧化物

Seung Ju Kim , Sungwoo Park , Hyo Min Cho , Ho Won Jang
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引用次数: 0

摘要

卤化物过氧化物作为未来电子应用的前景广阔的材料,其独特的性能(包括长载流子扩散长度、可调带隙、易于合成和成本效益)正日益受到重视。然而,迄今为止已被广泛研究的多晶卤化物包晶体薄膜存在着明显的缺点,包括晶界不可控和不稳定问题。最近,低维卤化物包晶(LD HPs)具有更高的稳定性和可适应的形态,使其成为光电子学以外的下一代电子器件的理想候选材料。本综述全面探讨了基于低维卤化物的电子学的最新进展,涵盖了结构特点、针对不同尺寸的合成方法以及各种应用。此外,还讨论了 LD HP 在电阻式随机存取存储器、先进晶体管和神经形态计算硬件等电子应用中表现出的令人印象深刻的性能。最后,该综述概述了将基于 LD HP 的先进电子器件扩大到商业生产所面临的挑战和需要考虑的问题,为研究人员涉足先进电子器件新材料领域提供了宝贵的见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Low-dimensional halide perovskites for advanced electronics

Halide perovskites are gaining prominence as promising materials for future electronic applications, primarily due to their unique properties including long carrier diffusion lengths, tunable bandgap, facile synthesis, and cost efficiency. However, polycrystalline halide perovskite thin films, which have been widely studied to date, have significant drawbacks including uncontrollable grain boundaries and instability issues. Recently, low-dimensional halide perovskites (LD HPs) offer enhanced stability and adaptable morphologies, making them attractive candidates for next-generation electronics beyond optoelectronics. This review comprehensively explores recent advancements in LD HP-based electronics, covering structural characteristics, synthesis methods tailored to different dimensions, and diverse applications. Furthermore, the impressive performance demonstrated by LD HPs in electronic applications including resistive random-access memory, advanced transistors, and neuromorphic computing hardware is discussed. Finally, the review outlines the challenges and perspectives required to scale up LD HP-based advanced electronics for commercial production, offering valuable insights for researchers venturing into the realm of new materials for advanced electronics.

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