Resolving localized geometrically necessary dislocation densities in Al-Mg polycrystal via in situ EBSD

The distribution of geometrically necessary dislocation (GND) densities is critical to understanding the heterogeneous plastic deformation at intragranular scales in polycrystals. In this work, we performed an in situ electron backscatter diffraction (EBSD) measurement during the tensile test on a polycrystalline Al-Mg alloy. The EBSD patterns were processed through the integrated digital image correlation algorithm to enhance angular resolution. Based on the Nye dislocation density tensor, GND densities of 18 dislocation types in fcc crystals were resolved and mapped at macroscopic strains ranging from 5% to 16%. The evolution of GND distribution showed that GNDs were generated near grain boundaries at small strains and later localized at grain interiors along subgrain boundaries and slip bands at large strains. The inhomogeneous increase in GND densities of different dislocation types, representing dislocation substructures, along the subgrain boundaries was disclosed. Meanwhile, high GND densities were observed along the slip bands when a double noncoplanar slip system was activated inside the grains. The obstructed movement of dislocations by Lomer junctions explained the GND storage in different $\left\{111\right\}$ slip planes. The existence of Lomer junctions was proven by Burgers circuit analysis with high-resolution transmission electron microscopy, which explained the increase in $\left[101\right]$ screw dislocation density according to the dislocation reaction.