Sr0.5Ba0.5Nb2O6/Ba0.2Sr0.8TiO3/Si(001) 异质结构的铁电特性

IF 0.8 4区 物理与天体物理 Q4 PHYSICS, APPLIED Technical Physics Letters Pub Date : 2024-08-29 DOI:10.1134/s1063785023180050
D. A. Kiselev, A. V. Pavlenko, S. P. Zinchenko
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引用次数: 0

摘要

摘要 使用扫描探针显微镜和介电光谱法研究了在带有预沉积 Ba0.2Sr0.8TiO3 层的 Si(001)(p 型)基底上生长的 Sr0.5Ba0.5Nb2O6 c 型薄膜的特性。结果表明,Sr0.5Ba0.5Nb2O6 薄膜表面粗糙度低(小于 6 纳米),平均结晶尺寸约为 93 纳米。研究表明,薄膜中存在从其表面指向基底的自发极化,这导致了在硅基底具有 p 型导电性而没有外部场效应的情况下的场效应。在不同极性(+10 V 和 -10 V)的外部电场作用下,极化区域的表面电势信号大小不同,其弛豫到初始状态的过程也不同。本文讨论了形成这些模式的原因。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Ferroelectric Properties of Heterostructure Sr0.5Ba0.5Nb2O6/Ba0.2Sr0.8TiO3/Si(001)

Abstract

The properties of c-oriented thin films of Sr0.5Ba0.5Nb2O6 grown on a Si(001) (p-type) substrate with a pre-deposited Ba0.2Sr0.8TiO3 layer were studied using scanning probe microscopy and dielectric spectroscopy. It is established that the Sr0.5Ba0.5Nb2O6 films are characterized by low surface roughness (less than 6 nm) and average crystallite size of ~93 nm. It is shown that there is spontaneous polarization in the film directed from its surface to the substrate, which causes the manifestation of the field effect for the case of the Si substrate with p-type conductivity without the external field effect. Differences in the magnitudes of the surface potential signal for regions polarized by an external electric field of different polarities (+10 and –10 V), as well as in their relaxation to the initial state, are revealed. The reasons for the established patterns are discussed.

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来源期刊
Technical Physics Letters
Technical Physics Letters 物理-物理:应用
CiteScore
1.50
自引率
0.00%
发文量
44
审稿时长
2-4 weeks
期刊介绍: Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.
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