{"title":"光电探测器结构中的氮化镓层研究","authors":"Zehor Allam, Badia Bouchachia, Chahrazad Boudaoud, Loumafak Hafaifa","doi":"10.1080/03772063.2024.2390091","DOIUrl":null,"url":null,"abstract":"This study involves the design and simulation of a BGaN/GaN/ZnO/Al2O3 photodetector for UV/BLUE light with two different boron concentrations: 5% and 20%. The proposed photodetector structure exhib...","PeriodicalId":50375,"journal":{"name":"IETE Journal of Research","volume":"24 1","pages":""},"PeriodicalIF":1.3000,"publicationDate":"2024-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of BGaN Layer in Photodetector Structure\",\"authors\":\"Zehor Allam, Badia Bouchachia, Chahrazad Boudaoud, Loumafak Hafaifa\",\"doi\":\"10.1080/03772063.2024.2390091\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study involves the design and simulation of a BGaN/GaN/ZnO/Al2O3 photodetector for UV/BLUE light with two different boron concentrations: 5% and 20%. The proposed photodetector structure exhib...\",\"PeriodicalId\":50375,\"journal\":{\"name\":\"IETE Journal of Research\",\"volume\":\"24 1\",\"pages\":\"\"},\"PeriodicalIF\":1.3000,\"publicationDate\":\"2024-08-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IETE Journal of Research\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://doi.org/10.1080/03772063.2024.2390091\",\"RegionNum\":4,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IETE Journal of Research","FirstCategoryId":"94","ListUrlMain":"https://doi.org/10.1080/03772063.2024.2390091","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Investigation of BGaN Layer in Photodetector Structure
This study involves the design and simulation of a BGaN/GaN/ZnO/Al2O3 photodetector for UV/BLUE light with two different boron concentrations: 5% and 20%. The proposed photodetector structure exhib...
期刊介绍：
IETE Journal of Research is a Bimonthly journal published by the Institution of Electronics and Telecommunication Engineers (IETE), India. It publishes scientific and technical papers describing original research work or novel product/process development. Occasionally special issues are brought out on new and emerging research areas.
IETE Journal of Research is useful to researchers, engineers, scientists, teachers, managers and students who are interested in keeping a track of original research and development work being carried out in the broad area of electronics, telecommunications, computer science and engineering and information technology.
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