二维电子气体的顺磁特性取决于浓度和温度

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2024-09-11 DOI:10.1007/s10825-024-02231-z
P. J. Baymatov, B. T. Abdulazizov, O. M. Yunusov, Kh. N. Juraev, A. A. Saydaliev
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引用次数: 0

摘要

本文介绍了二维电子气体的顺磁性取决于浓度和温度的数值和分析结果。研究分析了自旋磁感应强度与量子阱宽度、温度、浓度以及共振点和远离共振点的化学势的关系。在具有抛物线光谱和无限深度量子井的理想气体模型中分析了自旋感度。不同温度、量子井宽度和浓度下的电感计算结果将以图表形式呈现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Features of paramagnetism of a two-dimensional electron gas depending on concentration and temperature

The numerical and analytical results of a study on the paramagnetism of a two-dimensional electron gas depending on concentration and temperature are presented. The dependence of spin susceptibility on the width of the quantum well, temperature, concentration, and chemical potential at the resonance points and away from it was analyzed. The susceptibility was analyzed in the model of an ideal gas with a parabolic spectrum and a quantum well of infinite depth. The numerical results of the susceptibility calculation will be presented in graphs for different temperatures, quantum well widths, and concentrations.

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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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